description the h11ag series consists of a gallium-aluminum- arsenide ired emitting diode coupled with a silicon phototransistor in a dual in-line package. this device provides the unique feature of the high current transfer ratio at both low output voltage and low input current. this makes it ideal for use in low power logic circuits, telecommunications equipment and portable electronics isolation applications. phototransistor optocouplers h11ag1 h11ag2 h11ag3 applications ? cmos driven solid state reliability telephone ring detector digital logic isolation features high efficiency low degradation liquid epitaxial ired logic level compatible, input and output currents, with cmos and ls/ttl high dc current transfer ratio at low input currents underwriters laboratory (ul) recognized file #e90700 6 1 6 1 6 1 1 2 6 5col 4 emitter base anode cathode n/c 3 schematic parameters symbol device value units total device t stg all -55 to +150 c storage temperature operating temperature t opr all -55 to +100 c lead solder temperature t sol all 260 for 10 sec c total device power dissipation @ 25c (led plus detector) p d all 260 mw derate linearly from 25 c 3.5 mw/ c emitter i f all 50 ma continuous forward current reverse voltage v r all 6 v forward current - peak (1 s pulse, 300 pps) i f (pk) all 3.0 a led power dissipation 25 c ambient p d all 75 mw derate linearly from 25 c 1.0 mw/ c detector detector power dissipation @ 25 c p d all 150 mw derate linearly from 25 c 2.0 mw/ c continuous collector current all 50 ma ? ? 2001 fairchild semiconductor corporation ds300213 1/28/02 1 of 8 www.fairchildsemi.com absolute maximum ratings
parameters test conditions symbol device min typ max units emitter input forward voltage i f = 1 ma v f all 1.5 v reverse leakage current v r = 5 v, t a = 25 c i r all 10 a v r = 5 v, t a = 70 c i r all 100 a capacitance v = 0, f = 1.0 mhz c j all 100 pf detector breakdown voltage collector to emitter i c = 1.0 ma, i f = 0 bv ceo all 30 v collector to base i c = 100 a, i f = 0 bv cbo all 70 v emitter to collector i c = 100 a, i f = 0 bv eco all 7 v leakage current collector to emitter v ce = 10 v, i f = 0 i ceo all 5 10 a capacitance v ce = 10 v, f = 1 mhz c ce all 2 pf individual component characteristics electrical characteristics (t a = 0-70 c unless otherwise specified.) dc characteristics test conditions symbol device min typ max units h11ag1 300 i f = 1 ma, v ce = 5 v ctr h11ag2 200 h11ag3 100 h11ag1 100 current transfer ratio i f = 1 ma, v ce = 0.6 v ctr h11ag2 50 % h11ag3 20 i f = 0.2 ma, v ce = 1.5 v ctr h11ag1 100 h11ag2 50 saturation voltage i f = 2.0 ma, i c = 0.5 ma v ce(sat) all .40 v ac characteristics test conditions symbol device min typ max units non-saturated switching times turn-on time r l = 100 ? , i f = 1 ma, v cc = 5 v t on all 5 s turn-off time r l = 100 ? , i f = 1 ma, v cc = 5 v t off all 5 s transfer characteristics (t a = 25 c unless otherwise specified.) www.fairchildsemi.com 2 of 8 1/28/02 ds300213 parameters test conditions symbol min typ max units input-output isolation voltage i i-0 1 a, t = 1 min. v iso 5300 vac(rms) isolation characteristics phototransistor optocouplers h11ag1 h11ag2 h11ag3
ds300213 1/28/02 3 of 8 www.fairchildsemi.com figure 1. led forward voltage vs. forward current i f - led forward current (ma) 0.1 1 10 100 v f - f o r w a r d v o l t a g e ( v ) 0.8 1.0 1.2 1.4 1.6 1.8 2.0 figure 2. normalized current transfer ratio vs. forward current i f - forward current - ma 0.1 1 10 100 n o r m a l i z e d c t r c e 0.2 0.4 0.6 0.8 1.0 1.2 figure 3. normalized ctr vs. temperature t a - ambient temperature - o c -60 -40 -20 0 20 40 60 80 100 n o r m a l i z e d c t r c e 0.0 0.2 0.4 0.6 0.8 1.0 1.2 1.4 1.6 t a o c = 25 t a = -55 o c t a = 100 o c normalized to: i f = 5ma v ce = 5v t a = 25 o c normalized to: i f = 5ma v ce = 5v t a = 25 o c figure 4. normalized collector vs. collector - emitter voltage v ce - collector - emitter voltage - v 0.1 1 10 n o r m a l i z e d i c e - c o l l e c t o r - e m i t t e r c u r r e n t 0.0001 0.001 0.01 0.1 1 10 normalized to: i f = 5ma v ce = 5v t a = 25 o c i f = 0.2ma i f = 0.5ma i f = 1ma i f = 2ma i f = 5ma i f = 10ma i f = 2ma i f = 5ma i f = 10ma i f = 0.2ma i f = 0.5ma i f = 1ma phototransistor optocouplers h11ag1 h11ag2 h11ag3
figure 5. normalized collector base photocurrent ratio vs. forward current i f - forward current - ma 0 102030405060708090100 n o r m a l i z e d i c b - c o l l e c t o r b a s e p h o t o c u r r e n t 0 5 10 15 20 25 30 figure 6. normalized collector - base current vs. temperature t a - ambient temperature - o c -60 -40 -20 0 20 40 60 80 100 n o r m a l i z e d c o l l e c t o r - b a s e c u r r e n t 0.001 0.01 0.1 1 10 a normalized to: i f = 5ma v cb = 5v t = 25 o c normalized to: i f = 5ma v cb = 5v t a = 25 o c i f = 0.2ma i f = 1ma i f = 0.5ma i f = 2ma i f = 5ma i f = 10ma figure 7. collector-emitter dark current vs. ambient temperature t a - ambient temperature ( o c) 0 102030405060708090100 i c e o - d a r k c u r r e n t ( n a ) 0.1 1 10 100 1000 10000 i f = 0ma v ce = 10v www.fairchildsemi.com 4 of 8 1/28/02 ds300213 phototransistor optocouplers h11ag1 h11ag2 h11ag3
figure 8. cmos input, 3kw, zero voltage switching solid state relay 15k +5v 0.16ma cmos control h11ag1 1.5m ? 75k ? 47 ? 22k 0.1 c203d dt230h (4) 150pf 25a load 47 ? sc160b v130la20a 120v 60hz supply 2n4256 3v v cc 10v 1n148 c 1 ac input voltage figure 9. telephone ring detector/a.c. line cmos input isolator r 1 4093 or 74hc14 h11ag1 47k ? 4.7m ? c 2 0.1 4.7k ? the h11ag1 ? s superior performance at low input currents allows standard cmos logic circuits to directly operate a 25a solid state relay. circuit operation is as follows: power switching is provided by the sc160b, 25a triac. its gate is controlled by the c203b via the dt230h rectifier bridge. the c203b turn-on is inhibited by the 2n4256 when line voltage is above 12v and/or the h11ag is off. false tr igger and dv/dt protection are provided by the combination of the mov ? varistor and rc snubber network. the h11ag1 uses less input power than the neon bulb traditionally used to monitor telephone and line voltages. additionally. re sponse time can be tailored to ignore telephone dial tap, switching transients and other undesired signals by modifying the value of c 2. the high impedance to line voltage also can simply board layout spacing requirements. input r 1 c 1 z 40-90 vrms 75 k 0.1 f 109k 20 hz 1/10 w 100 v 95-135 vrms 180 k 12 f 285k 60 hz 1/10 w 200 v 200-280 vrms 390 k 6.80 f 550k 50/60 hz 1/4 w 400 v dc component of input voltage is ignored due to c1 ds300213 1/28/02 5 of 8 www.fairchildsemi.com phototransistor optocouplers h11ag1 h11ag2 h11ag3
lead coplanarity : 0.004 (0.10) max 0.270 (6.86) 0.240 (6.10) 0.350 (8.89) 0.330 (8.38) 0.300 (7.62) typ 0.405 (10.30) max 0.315 (8.00) min 0.016 (0.40) min 2 5 pin 1 id. 0.016 (0.41) 0.008 (0.20) 0.100 (2.54) typ 0.022 (0.56) 0.016 (0.41) 0.070 (1.78) 0.045 (1.14) 0.200 (5.08) 0.165 (4.18) 4 3 0.020 (0.51) min 1 6 0.100 (2.54) typ 0.020 (0.51) min 0.350 (8.89) 0.330 (8.38) 0.270 (6.86) 0.240 (6.10) pin 1 id. 0.022 (0.56) 0.016 (0.41) 0.070 (1.78) 0.045 (1.14) 0.200 (5.08) 0.135 (3.43) 0.300 (7.62) typ 0 to 15 0.154 (3.90) 0.100 (2.54) seating plane 0.016 (0.40) 0.008 (0.20) seating plane 0.016 (0.40) 0.008 (0.20) 0.070 (1.78) 0.045 (1.14) 0.350 (8.89) 0.330 (8.38) 0.154 (3.90) 0.100 (2.54) 0.200 (5.08) 0.135 (3.43) 0.004 (0.10) min 0.270 (6.86) 0.240 (6.10) 0.400 (10.16) typ 0 to 15 0.022 (0.56) 0.016 (0.41) 0.100 (2.54) typ note all dimensions are in inches (millimeters) 0.070 (1.78) 0.060 (1.52) 0.030 (0.76) 0.100 (2.54) 0.295 (7.49) 0.415 (10.54) package dimensions (surface mount) package dimensions (through hole) package dimensions (0.4?lead spacing) recommended pad layout for surface mount leadform www.fairchildsemi.com 6 of 8 1/28/02 ds300213 phototransistor optocouplers h11ag1 h11ag2 h11ag3
s .s surface mount lead bend sd .sd surface mount; tape and reel w.w0.4 ? lead spacing 300 .300 vde 0884 300w .300w vde 0884, 0.4 ? lead spacing 3s .3s vde 0884, surface mount 3sd .3sd vde 0884, surface mount, tape & reel option order entry identifier description 4.0 0.1 ? 1.55 0.05 user direction of feed 4.0 0.1 1.75 0.10 7.5 0.1 16.0 0.3 12.0 0.1 0.30 0.05 13.2 0.2 4.85 0.20 0.1 max 10.30 0.20 9.55 0.20 ? 1.6 0.1 carrier tape specifications (?d? taping orientation) note all dimensions are millimeters ds300213 1/28/02 7 of 8 www.fairchildsemi.com phototransistor optocouplers h11ag1 h11ag2 h11ag3
marking information re?w pro?e (black package, no suf?) h11ag1 v xx yy k 1 2 6 4 3 5 de?itions 1 fairchild logo 2 device number 3 vde mark (note: only appears on parts ordered with vde option ?see order entry table) 4 two digit year code, e.g., ?3 5 two digit work week ranging from ?1 to ?3 6 assembly package code peak reflow temperature: 225 c (package surface temperature) time of temperature higher than 183 c for 60 150 seconds one time soldering reflow is recommended 215 c, 10 30 s 225 c peak time (minute) 0 300 250 200 150 100 50 0 0.5 1 1.5 2 2.5 3 3.5 4 4.5 temperature ( c) time above 183 c, 60 150 sec ramp up = 3 c/sec
disclaimer fairchild semiconductor reserves the right to make changes without further notice to any products herein to improve reliability, function or design. fairchild does not assume any liability arising out of the application or use of any product or circuit described herein; neither does it convey any license under its patent rights, nor the rights of others. trademarks the following are registered and unregistered trademarks fairchild semiconductor owns or is authorized to use and is not intended to be an exhaustive list of all such trademarks. life support policy fairchild?s products are not authorized for use as critical components in life support devices or systems without the express written approval of fairchild semiconductor corporation. as used herein: 1. life support devices or systems are devices or systems which, (a) are intended for surgical implant into the body, or (b) support or sustain life, or (c) whose failure to perform when properly used in accordance with instructions for use provided in the labeling, can be reasonably expected to result in significant injury to the user. 2. a critical component is any component of a life support device or system whose failure to perform can be reasonably expected to cause the failure of the life support device or system, or to affect its safety or effectiveness. product status definitions definition of terms datasheet identification product status definition advance information preliminary no identification needed obsolete this datasheet contains the design specifications for product development. specifications may change in any manner without notice. this datasheet contains preliminary data, and supplementary data will be published at a later date. fairchild semiconductor reserves the right to make changes at any time without notice in order to improve design. this datasheet contains final specifications. fairchild semiconductor reserves the right to make changes at any time without notice in order to improve design. this datasheet contains specifications on a product that has been discontinued by fairchild semiconductor. the datasheet is printed for reference information only. formative or in design first production full production not in production isoplanar? littlefet? microcoupler? microfet? micropak? microwire? msx? msxpro? ocx? ocxpro? optologic ? optoplanar? pacman? pop? fast ? fastr? fps? frfet? globaloptoisolator? gto? hisec? i 2 c? i-lo ? implieddisconnect? rev. i13 acex? activearray? bottomless? coolfet? crossvolt ? dome? ecospark? e 2 cmos? ensigna? fact? fact quiet series? power247? poweredge? powersaver? powertrench ? qfet ? qs? qt optoelectronics? quiet series? rapidconfigure? rapidconnect? serdes? silent switcher ? smart start? spm? stealth? superfet? supersot?-3 supersot?-6 supersot?-8 syncfet? tinylogic ? tinyopto? trutranslation? uhc? ultrafet ? vcx? across the board. around the world.? the power franchise ? programmable active droop?
|
